Wolfson Microelectronics Plc. Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs C3M0120065J

The C3M0120065J is a third-generation silicon carbide N-channel enhancement mode MOSFET designed for high-efficiency power conversion in applications such as solar inverters, EV battery chargers, and switch-mode power supplies. It is packaged in a TO-263-7 surface-mount style with a 7mm creepage distance between drain and source. The device has a drain-source voltage rating of 650 V, a continuous drain current of 15 A at 100°C, and a maximum on-resistance of 157 mΩ at 15 V gate-source voltage. It features a low gate charge of 26 nC, fast switching with turn-on and turn-off delays under 20 ns, and a thermal resistance from junction to case of 1.73 °C/W. The operating junction and storage temperature range is -40 °C to +175 °C. The part is RoHS compliant and meets JEDEC J-STD-020 solder temperature requirements.