The C3M0025065D is a 650 V N-channel enhancement mode silicon carbide MOSFET designed for high-efficiency power conversion in applications such as EV chargers, solar inverters, and industrial SMPS. It features a TO-247-3 package with a maximum continuous drain current of 70 A at 100°C case temperature and a drain-source on-state resistance of 25 mΩ at 25°C. The device supports an operational gate-source voltage of -4 V to 15 V and has a maximum junction and storage temperature range of -40°C to +175°C. Thermal resistance from junction to case is 0.46 °C/W. It is RoHS compliant and halogen-free.
Alternative Parts (Cross-Reference): Cross
Manufacturer: Wolfspeed, Inc.
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: C3M™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Operating Temperature: -40°C ~ 175°C (TJ)
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Name | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| Polarity | N-Channel |
