The WI62195 is a 650 V enhancement mode GaN-on-silicon half-bridge power IC designed for high-efficiency and high-density power conversion applications. It features a bottom-side cooled 6x8 mm PDFN package with a low inductance design, each switch rated for 9 A continuous drain current and 195 mΩ RDS(on). The device supports gate drive voltages from 0 V to 6 V, with transient tolerance up to 7 V, and enables switching frequencies above 1 MHz with zero reverse recovery loss. It is supplied in a 6x8 mm PDFN package in tray or tape-and-reel formats.
MOSFET 2N-CH 750V 9A 14PQFN
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4296-WI62195-ND |
| Product Name | FET, MOSFET Arrays |
| Transistor Technology / Material | Gallium Nitride |