Winbond Electronics Corporation America Memory W989D6DBGX6E TR

Description
SDRAM - Mobile LPSDR Memory IC 512Mb (32M x 16) LVCMOS 166MHz 5ns 54-VFBGA (8x9)
Request a Quote Datasheet
Description
SDRAM - Mobile LPSDR Memory IC 512Mb (32M x 16) LVCMOS 166MHz 5ns 54-VFBGA (8x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W989D6DBGX6ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPSDR Memory IC 512Mb (32M x 16) LVCMOS 166MHz 5ns 54-VFBGA (8x9)

SDRAM - Mobile LPSDR Memory IC 512Mb (32M x 16) LVCMOS 166MHz 5ns 54-VFBGA (8x9)

Buy Now Datasheet
512MB LPSDR, X16, 166MHZ, 46NM

512MB LPSDR, X16, 166MHZ, 46NM

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W989D6DBGX6E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W989D6DBGX6E TR
Integrated Circuits (ICs) - Memory W989D6DBGX6E TR
512MB LPSDR, X16, 166MHZ, 46NM

512MB LPSDR, X16, 166MHZ, 46NM

Supplier's Site
Memory - W989D6DBGX6E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 512Mbit LVCMOS 166 MHz 5 ns 54-VFBGA (8x9)

SDRAM - Mobile LPSDR Memory IC 512Mbit LVCMOS 166 MHz 5 ns 54-VFBGA (8x9)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W989D6DBGX6ETR-ND W989D6DBGX6E TR W989D6DBGX6E TR W989D6DBGX6E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
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5 suppliers