The W988D2FBJX6E is a 256Mb Low Power SDRAM memory device from Quarktwin Technology Ltd., designed for mobile applications requiring low power consumption. It operates at a voltage range of 1.7V to 1.95V and supports a clock frequency of up to 166MHz. The memory is organized as 4 banks of 32 bits, providing efficient data handling for various applications such as 2.5G/3G cellular phones, PDAs, and digital cameras. This memory device features several low power modes, including Standard Self Refresh, Programmable Partial Array Self Refresh, and Deep Power Down Mode, making it suitable for battery-operated devices. It also supports CAS Latency options of 2 and 3, with burst lengths of 1, 2, 4, 8, and full page. The W988D2FBJX6E is packaged in a 90-ball VFBGA format, measuring 8x13 mm, and is rated for an extended operating temperature range of -40¬8C to +85¬8C. Engineers looking for a memory solution that balances performance and power efficiency in compact designs may find this product suitable for their projects.
IC DRAM 256MBIT PAR 90VFBGA Product overview: W988D2FBJX6E from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W988D2FBJX6E can be used for catalog matching and distributor lookup.
SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5.4ns 90-VFBGA (8x13)
Manufacturer: Winbond Electronics
Win Source Part Number: 750662-W988D2FBJX6E
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - Mobile LPSDR
Memory Type: Volatile
Memory Size: 256Mb (8M x 32)
Access Time: 5.4ns
Categories: Integrated Circuits
Supplier Device Package: 90-VFBGA (8x13)
Temperature Range - Operating: -25°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 90-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 240
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V
IC DRAM 256MBIT PARALLEL 90VFBGA
IC DRAM 256MBIT PARALLEL 90VFBGA
SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-W988D2FBJX6E | W988D2FBJX6E-ND | 750662-W988D2FBJX6E | W988D2FBJX6E | W988D2FBJX6E | W988D2FBJX6E |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - W988D2FBJX6E | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) |
