Winbond Electronics Corporation America Memory W987D2HBJX6E TR

Description
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)
Datasheet
Description
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W987D2HBJX6E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 90VFBGA

IC DRAM 128MBIT PARALLEL 90VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number W987D2HBJX6E TR W987D2HBJX6E TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5.4 ns 5.4 ns
Operating Temperature -25 to 85 C (-13 to 185 F)
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3 suppliers