Winbond Electronics Corporation America Memory W987D2HBJX6E TR

Description
IC DRAM 128MBIT PARALLEL 90VFBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 90VFBGA
Datasheet

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Product
Description
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IC DRAM 128MBIT PARALLEL 90VFBGA

IC DRAM 128MBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Memory - W987D2HBJX6E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number W987D2HBJX6E TR W987D2HBJX6E TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5.4 ns 5.4 ns
Density 128000 kbits 128000 kbits
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