Winbond Electronics Corporation America Memory W97AH6KBQX2E

Description
SDRAM - Mobile LPDDR2 Memory IC 1Gbit Parallel 400 MHz 168-WFBGA (12x12)
Datasheet
Description
SDRAM - Mobile LPDDR2 Memory IC 1Gbit Parallel 400 MHz 168-WFBGA (12x12)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W97AH6KBQX2E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 1Gbit Parallel 400 MHz 168-WFBGA (12x12)

SDRAM - Mobile LPDDR2 Memory IC 1Gbit Parallel 400 MHz 168-WFBGA (12x12)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W97AH6KBQX2E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W97AH6KBQX2E
Integrated Circuits (ICs) - Memory W97AH6KBQX2E
IC DRAM 1G PARALLEL 168WFBGA

IC DRAM 1G PARALLEL 168WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number W97AH6KBQX2E W97AH6KBQX2E
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 7164L20YG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details
Logic - Logic - FIFOs Memory - CD54HCT40105F3A - 1160037-CD54HCT40105F3A - Win Source Electronics
Specs
Memory Category FIFO
View Details
2 suppliers
Memory - MYXxxSMSxxxxPxxxxx-xx/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882745 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details