Winbond Electronics Corporation America Memory W979H2KBVX2E

Description
SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) Parallel 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) Parallel 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W979H2KBVX2E-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) Parallel 400MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) Parallel 400MHz 134-VFBGA (10x11.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W979H2KBVX2E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W979H2KBVX2E
Integrated Circuits (ICs) - Memory W979H2KBVX2E
IC DRAM 512MBIT PAR 134VFBGA

IC DRAM 512MBIT PAR 134VFBGA

Supplier's Site
IC DRAM 512MBIT PAR 134VFBGA

IC DRAM 512MBIT PAR 134VFBGA

Supplier's Site Datasheet
Memory - W979H2KBVX2E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 512Mbit Parallel 400 MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 512Mbit Parallel 400 MHz 134-VFBGA (10x11.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number W979H2KBVX2E-ND W979H2KBVX2E W979H2KBVX2E W979H2KBVX2E
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
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