IC DRAM 256MBIT PAR 134VFBGA Product overview: W978H6KBVX2I from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W978H6KBVX2I can be used for catalog matching and distributor lookup.
SDRAM - Mobile LPDDR2 Memory IC 256Mb (16M x 16) Parallel 400MHz 134-VFBGA (10x11.5)
IC DRAM 256MBIT PAR 134VFBGA
SDRAM - Mobile LPDDR2 Memory IC 256Mbit Parallel 400 MHz 134-VFBGA (10x11.5)
IC DRAM 256MBIT PAR 134VFBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-W978H6KBVX2I | W978H6KBVX2I-ND | W978H6KBVX2I | W978H6KBVX2I | W978H6KBVX2I |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.5 ns | ||||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits |
| Number of Words | 4000 k |
