Winbond Electronics Corporation America Memory W978H6KBVX2E TR

Description
SDRAM - Mobile LPDDR2-S4B Memory IC 256Mb (16M x 16) HSUL_12 400MHz 5.5ns 134-VFBGA (10x11.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR2-S4B Memory IC 256Mb (16M x 16) HSUL_12 400MHz 5.5ns 134-VFBGA (10x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W978H6KBVX2ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR2-S4B Memory IC 256Mb (16M x 16) HSUL_12 400MHz 5.5ns 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4B Memory IC 256Mb (16M x 16) HSUL_12 400MHz 5.5ns 134-VFBGA (10x11.5)

Buy Now Datasheet
Memory - W978H6KBVX2E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2-S4B Memory IC 256Mbit HSUL_12 400 MHz 5.5 ns 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4B Memory IC 256Mbit HSUL_12 400 MHz 5.5 ns 134-VFBGA (10x11.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W978H6KBVX2E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W978H6KBVX2E TR
Integrated Circuits (ICs) - Memory W978H6KBVX2E TR
256MB LPDDR2, X16, 400MHZ, -25 ~

256MB LPDDR2, X16, 400MHZ, -25 ~

Supplier's Site
256MB LPDDR2, X16, 400MHZ, -25 ~

256MB LPDDR2, X16, 400MHZ, -25 ~

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W978H6KBVX2ETR-ND W978H6KBVX2E TR W978H6KBVX2E TR W978H6KBVX2E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 134-VFBGA BGA; 134-VFBGA BGA
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