Winbond Electronics Corporation America Memory W978H6KBVX1E TR

Description
SDRAM - Mobile LPDDR2-S4B Memory IC 256Mb (16M x 16) HSUL_12 533MHz 5.5ns 134-VFBGA (10x11.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR2-S4B Memory IC 256Mb (16M x 16) HSUL_12 533MHz 5.5ns 134-VFBGA (10x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W978H6KBVX1ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR2-S4B Memory IC 256Mb (16M x 16) HSUL_12 533MHz 5.5ns 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4B Memory IC 256Mb (16M x 16) HSUL_12 533MHz 5.5ns 134-VFBGA (10x11.5)

Buy Now Datasheet
256MB LPDDR2, X16, 533MHZ, -25 ~

256MB LPDDR2, X16, 533MHZ, -25 ~

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W978H6KBVX1E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W978H6KBVX1E TR
Integrated Circuits (ICs) - Memory W978H6KBVX1E TR
256MB LPDDR2, X16, 533MHZ, -25 ~

256MB LPDDR2, X16, 533MHZ, -25 ~

Supplier's Site
Memory - W978H6KBVX1E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2-S4B Memory IC 256Mbit HSUL_12 533 MHz 5.5 ns 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4B Memory IC 256Mbit HSUL_12 533 MHz 5.5 ns 134-VFBGA (10x11.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W978H6KBVX1ETR-ND W978H6KBVX1E TR W978H6KBVX1E TR W978H6KBVX1E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 134-VFBGA BGA BGA; 134-VFBGA
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2 suppliers