Winbond Electronics Corporation America Memory W978H2KBVX2E

Description
SDRAM - Mobile LPDDR2 Memory IC 256Mb (8M x 32) Parallel 400MHz 134-VFBGA (10x11.5)
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Description
SDRAM - Mobile LPDDR2 Memory IC 256Mb (8M x 32) Parallel 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W978H2KBVX2E-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR2 Memory IC 256Mb (8M x 32) Parallel 400MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 256Mb (8M x 32) Parallel 400MHz 134-VFBGA (10x11.5)

Buy Now Datasheet
Memory - W978H2KBVX2E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 256Mbit Parallel 400 MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 256Mbit Parallel 400 MHz 134-VFBGA (10x11.5)

Buy Now Datasheet
IC DRAM 256MBIT PAR 134VFBGA

IC DRAM 256MBIT PAR 134VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W978H2KBVX2E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W978H2KBVX2E
Integrated Circuits (ICs) - Memory W978H2KBVX2E
IC DRAM 256MBIT PAR 134VFBGA

IC DRAM 256MBIT PAR 134VFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number W978H2KBVX2E-ND W978H2KBVX2E W978H2KBVX2E W978H2KBVX2E
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
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3 suppliers