Winbond Electronics Corporation America Memory W948D6KBHX6E TR

Description
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)
Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W948D6KBHX6E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W948D6KBHX6E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W948D6KBHX6E TR
Integrated Circuits (ICs) - Memory W948D6KBHX6E TR
IC DRAM 256MBIT PARALLEL 60VFBGA

IC DRAM 256MBIT PARALLEL 60VFBGA

Supplier's Site
IC DRAM 256MBIT PARALLEL 60VFBGA

IC DRAM 256MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number W948D6KBHX6E TR W948D6KBHX6E TR W948D6KBHX6E TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns 5 ns
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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