Winbond Electronics Corporation America Memory W948D6KBHX6E TR

Description
IC DRAM 256MBIT PARALLEL 60VFBGA
Datasheet
Description
IC DRAM 256MBIT PARALLEL 60VFBGA
Datasheet

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Product
Description
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IC DRAM 256MBIT PARALLEL 60VFBGA

IC DRAM 256MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet
Memory - W948D6KBHX6E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W948D6KBHX6E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W948D6KBHX6E TR
Integrated Circuits (ICs) - Memory W948D6KBHX6E TR
IC DRAM 256MBIT PARALLEL 60VFBGA

IC DRAM 256MBIT PARALLEL 60VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number W948D6KBHX6E TR W948D6KBHX6E TR W948D6KBHX6E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5 ns 5 ns 5 ns
Density 256000 kbits 256000 kbits 256000 kbits
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
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