Winbond Electronics Corporation America Memory W948D6FBHX6G

Description
SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W948D6FBHX6G-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)

Buy Now Datasheet
Memory - W948D6FBHX6G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W948D6FBHX6G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W948D6FBHX6G
Integrated Circuits (ICs) - Memory W948D6FBHX6G
IC DRAM 256MBIT PARALLEL 60VFBGA

IC DRAM 256MBIT PARALLEL 60VFBGA

Supplier's Site
IC DRAM 256MBIT PARALLEL 60VFBGA

IC DRAM 256MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number W948D6FBHX6G-ND W948D6FBHX6G W948D6FBHX6G W948D6FBHX6G
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 60-TFBGA BGA; 60-TFBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS58C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-4134-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - EEPROM - 24LC04T-I/SL100 - 854740-24LC04T-I/SL100 - Win Source Electronics
Specs
Memory Category EEPROM
View Details
2 suppliers