SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)
IC DRAM 128MBIT PARALLEL 60VFBGA
IC DRAM 128MBIT PARALLEL 60VFBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | W947D6HBHX5E TR | W947D6HBHX5E TR | W947D6HBHX5E TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns |
| Operating Temperature | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | |
| Density | 128000 kbits | 128000 kbits | 128000 kbits |
