Winbond Electronics Corporation America Integrated Circuits (ICs) - Memory W947D6HBHX5E TR

Description
IC DRAM 128MBIT PARALLEL 60VFBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 60VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - W947D6HBHX5E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W947D6HBHX5E TR
Integrated Circuits (ICs) - Memory W947D6HBHX5E TR
IC DRAM 128MBIT PARALLEL 60VFBGA

IC DRAM 128MBIT PARALLEL 60VFBGA

Supplier's Site
Memory - W947D6HBHX5E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 60VFBGA

IC DRAM 128MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number W947D6HBHX5E TR W947D6HBHX5E TR W947D6HBHX5E TR
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz
Access Time 5 ns 5 ns 5 ns
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
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