Winbond Electronics Corporation America Memory W66CL2NQUAGI TR

Description
SDRAM - Mobile LPDDR4 Memory IC 4Gbit LVSTL_11 2.133 GHz 200-WFBGA (10x14.5)
Datasheet
Description
SDRAM - Mobile LPDDR4 Memory IC 4Gbit LVSTL_11 2.133 GHz 200-WFBGA (10x14.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W66CL2NQUAGI TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC 4Gbit LVSTL_11 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 4Gbit LVSTL_11 2.133 GHz 200-WFBGA (10x14.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W66CL2NQUAGI TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W66CL2NQUAGI TR
Integrated Circuits (ICs) - Memory W66CL2NQUAGI TR
4GB LPDDR4, DDP, X32, 1866MHZ, I

4GB LPDDR4, DDP, X32, 1866MHZ, I

Supplier's Site
4GB LPDDR4, DDP, X32, 1866MHZ, I

4GB LPDDR4, DDP, X32, 1866MHZ, I

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number W66CL2NQUAGI TR W66CL2NQUAGI TR W66CL2NQUAGI TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Logic - FIFOs Memory - 67C4033-10NL - Lingto Electronic Limited
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
Memory - NM24C09N - 1231761-NM24C09N - Win Source Electronics
Specs
Memory Category EEPROM
View Details
SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details