Winbond Electronics Corporation America Memory W66BL6NBUAGJ TR

Description
SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W66BL6NBUAGJTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

Buy Now Datasheet
2GB LPDDR4, X16, 1866MHZ, -40C~1

2GB LPDDR4, X16, 1866MHZ, -40C~1

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W66BL6NBUAGJ TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W66BL6NBUAGJ TR
Integrated Circuits (ICs) - Memory W66BL6NBUAGJ TR
2GB LPDDR4, X16, 1866MHZ, -40C~1

2GB LPDDR4, X16, 1866MHZ, -40C~1

Supplier's Site
Memory - W66BL6NBUAGJ TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W66BL6NBUAGJTR-ND W66BL6NBUAGJ TR W66BL6NBUAGJ TR W66BL6NBUAGJ TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 200-WFBGA BGA BGA; 200-WFBGA
Supply Voltage 1.06V ~ 1.17V, 1.7V ~ 1.95V 1.06V ~ 1.17V, 1.7V ~ 1.95V 1.06V ~ 1.17V, 1.7V ~ 1.95V
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