Winbond Electronics Corporation America Memory W66BL6NBUAGJ TR

Description
SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W66BL6NBUAGJTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W66BL6NBUAGJ TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W66BL6NBUAGJ TR
Integrated Circuits (ICs) - Memory W66BL6NBUAGJ TR
2GB LPDDR4, X16, 1866MHZ, -40C~1

2GB LPDDR4, X16, 1866MHZ, -40C~1

Supplier's Site
Memory - W66BL6NBUAGJ TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

Buy Now Datasheet
2GB LPDDR4, X16, 1866MHZ, -40C~1

2GB LPDDR4, X16, 1866MHZ, -40C~1

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W66BL6NBUAGJTR-ND W66BL6NBUAGJ TR W66BL6NBUAGJ TR W66BL6NBUAGJ TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 200-WFBGA BGA BGA; 200-WFBGA
Supply Voltage 1.06V ~ 1.17V, 1.7V ~ 1.95V 1.06V ~ 1.17V, 1.7V ~ 1.95V 1.06V ~ 1.17V, 1.7V ~ 1.95V
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