Winbond Electronics Corporation America Memory W63CH2MBVACE

Description
SDRAM - Mobile LPDDR3 Memory IC 4Gbit Parallel 933 MHz 178-VFBGA (11x11.5)
Datasheet
Description
SDRAM - Mobile LPDDR3 Memory IC 4Gbit Parallel 933 MHz 178-VFBGA (11x11.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W63CH2MBVACE - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR3 Memory IC 4Gbit Parallel 933 MHz 178-VFBGA (11x11.5)

SDRAM - Mobile LPDDR3 Memory IC 4Gbit Parallel 933 MHz 178-VFBGA (11x11.5)

Buy Now Datasheet
4GB LPDDR3, X32, 933MHZ

4GB LPDDR3, X32, 933MHZ

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W63CH2MBVACE - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W63CH2MBVACE
Integrated Circuits (ICs) - Memory W63CH2MBVACE
4GB LPDDR3, X32, 933MHZ

4GB LPDDR3, X32, 933MHZ

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number W63CH2MBVACE W63CH2MBVACE W63CH2MBVACE
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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2 suppliers