Winbond Electronics Corporation America Memory W63AH6NBVABE

Description
SDRAM - Mobile LPDDR3 Memory IC 1Gb (64M x 16) HSUL_12 800MHz 5.5ns 178-VFBGA (11x11.5)
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Description
SDRAM - Mobile LPDDR3 Memory IC 1Gb (64M x 16) HSUL_12 800MHz 5.5ns 178-VFBGA (11x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W63AH6NBVABE-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR3 Memory IC 1Gb (64M x 16) HSUL_12 800MHz 5.5ns 178-VFBGA (11x11.5)

SDRAM - Mobile LPDDR3 Memory IC 1Gb (64M x 16) HSUL_12 800MHz 5.5ns 178-VFBGA (11x11.5)

Buy Now Datasheet
Memory - W63AH6NBVABE - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR3 Memory IC 1Gbit HSUL_12 800 MHz 5.5 ns 178-VFBGA (11x11.5)

SDRAM - Mobile LPDDR3 Memory IC 1Gbit HSUL_12 800 MHz 5.5 ns 178-VFBGA (11x11.5)

Buy Now Datasheet
1GB LPDDR3, X16, 800MHZ

1GB LPDDR3, X16, 800MHZ

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - W63AH6NBVABE - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
W63AH6NBVABE
Integrated Circuits (ICs) - Memory - Memory W63AH6NBVABE
IC DRAM 1GBIT HSUL 12 178VFBGA

IC DRAM 1GBIT HSUL 12 178VFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W63AH6NBVABE-ND W63AH6NBVABE W63AH6NBVABE W63AH6NBVABE
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Package Type 178-VFBGA BGA; 178-VFBGA BGA; 178-VFBGA (11x11.5)
Supply Voltage 1.14V ~ 1.3V, 1.7V ~ 1.95V 1.14V ~ 1.3V, 1.7V ~ 1.95V -25degC ~ 85degC (TC)
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