Winbond Electronics Corporation America Memory W63AH2NBVABE TR

Description
SDRAM - Mobile LPDDR3 Memory IC 1Gb (32M x 32) HSUL_12 800MHz 5.5ns 178-VFBGA (11x11.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR3 Memory IC 1Gb (32M x 32) HSUL_12 800MHz 5.5ns 178-VFBGA (11x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W63AH2NBVABETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR3 Memory IC 1Gb (32M x 32) HSUL_12 800MHz 5.5ns 178-VFBGA (11x11.5)

SDRAM - Mobile LPDDR3 Memory IC 1Gb (32M x 32) HSUL_12 800MHz 5.5ns 178-VFBGA (11x11.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W63AH2NBVABE TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W63AH2NBVABE TR
Integrated Circuits (ICs) - Memory W63AH2NBVABE TR
1GB LPDDR3, X32, 800MHZ, T&R

1GB LPDDR3, X32, 800MHZ, T&R

Supplier's Site
Memory - W63AH2NBVABE TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR3 Memory IC 1Gbit HSUL_12 800 MHz 5.5 ns 178-VFBGA (11x11.5)

SDRAM - Mobile LPDDR3 Memory IC 1Gbit HSUL_12 800 MHz 5.5 ns 178-VFBGA (11x11.5)

Buy Now Datasheet
1GB LPDDR3, X32, 800MHZ, T&R

1GB LPDDR3, X32, 800MHZ, T&R

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W63AH2NBVABETR-ND W63AH2NBVABE TR W63AH2NBVABE TR W63AH2NBVABE TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Package Type 178-VFBGA BGA BGA; 178-VFBGA
Supply Voltage 1.14V ~ 1.3V, 1.7V ~ 1.95V 1.14V ~ 1.3V, 1.7V ~ 1.95V 1.14V ~ 1.3V, 1.7V ~ 1.95V
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