Winbond Electronics Corporation America Memory W634GU6QB11I TR

Description
SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
Request a Quote Datasheet
Description
SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W634GU6QB11ITR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)

SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)

Buy Now Datasheet
Memory - W634GU6QB11I TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)

SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)

Buy Now Datasheet
4GB DDR3L 1.35V SDRAM, X16, 933M

4GB DDR3L 1.35V SDRAM, X16, 933M

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 256-W634GU6QB11ITR-ND W634GU6QB11I TR W634GU6QB11I TR
Product Name Memory Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 96-VFBGA BGA; 96-VFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C256-20/P229 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details
Memory - 8 611 200 762 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details