Winbond Electronics Corporation America DRAM W632GU8NB12I

Description
Category: DRAM Win Source Part Number: 1446739-W632GU8NB12I Manufacturer: Winbond Electronics
Request a Quote Datasheet
Description
Category: DRAM Win Source Part Number: 1446739-W632GU8NB12I Manufacturer: Winbond Electronics
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DRAM - 1446739-W632GU8NB12I - Win Source Electronics
Laguna Hills, CA, United States
Category: DRAM Win Source Part Number: 1446739-W632GU8NB12I Manufacturer: Winbond Electronics

Category: DRAM
Win Source Part Number: 1446739-W632GU8NB12I
Manufacturer: Winbond Electronics

Buy Now
Memory IC and Storage Component - 774-W632GU8NB12I - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-W632GU8NB12I
Memory IC and Storage Component 774-W632GU8NB12I
IC DRAM 2GBIT PARALLEL 78VFBGA Product overview: W632GU8NB12I from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W632GU8NB12I can be used for catalog matching and distributor lookup.

IC DRAM 2GBIT PARALLEL 78VFBGA Product overview: W632GU8NB12I from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W632GU8NB12I can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - W632GU8NB12I-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 800MHz 20ns 78-VFBGA (8x10.5)

SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 800MHz 20ns 78-VFBGA (8x10.5)

Buy Now Datasheet
Memory - W632GU8NB12I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (8x10.5)

SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (8x10.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W632GU8NB12I - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W632GU8NB12I
Integrated Circuits (ICs) - Memory W632GU8NB12I
IC DRAM 2GBIT PARALLEL 78VFBGA

IC DRAM 2GBIT PARALLEL 78VFBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 78VFBGA

IC DRAM 2GBIT PARALLEL 78VFBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1446739-W632GU8NB12I 774-W632GU8NB12I W632GU8NB12I-ND W632GU8NB12I W632GU8NB12I W632GU8NB12I
Product Name DRAM Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.2250 ns 20 ns 20 ns 20 ns
Operating Temperature -40 C (-40 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits
Number of Words 32000 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Logic - FIFOs Memory - 67L401N - Lingto Electronic Limited
Rochester Electronics
Specs
Data Rate 10 MHz
Access Time 45 ns
Operating Current 160 mA
View Details