Winbond Electronics Corporation America Memory W631GU6MB11J

Description
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
Request a Quote Datasheet
Description
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W631GU6MB11J-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)

SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W631GU6MB11J - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W631GU6MB11J
Integrated Circuits (ICs) - Memory W631GU6MB11J
IC SDRAM 1GB X16 933MHZ 96WBGA

IC SDRAM 1GB X16 933MHZ 96WBGA

Supplier's Site
Memory - W631GU6MB11J - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)

SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)

Buy Now Datasheet
IC SDRAM 1GB X16 933MHZ 96WBGA

IC SDRAM 1GB X16 933MHZ 96WBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W631GU6MB11J-ND W631GU6MB11J W631GU6MB11J W631GU6MB11J
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 96-VFBGA BGA BGA; 96-VFBGA
Supply Voltage 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V
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