Winbond Electronics Corporation America Memory W631GU6MB11I TR

Description
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
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Description
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
Request a Quote
Datasheet
Datasheet Summary
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The W631GU6MB11I TR is a 1 Gigabit DDR3L SDRAM memory chip organized as 8M x 8 banks x 16 bits. It operates at a voltage of 1.35V, making it suitable for low-power applications. The device supports various features such as on-die termination (ODT), self-refresh modes, and multiple operating modes, which enhance its performance and efficiency in different scenarios. The memory chip is packaged in a 96-ball VFBGA format, with a ball pitch of 0.8mm, facilitating compact designs. It is designed for high-speed data transfer, supporting data rates up to 1866 MT/s, which is beneficial for applications requiring fast memory access. The product is suitable for use in consumer electronics, computing, and other applications where reliable and efficient memory is essential.

Datasheet Summary
Powered by GS/AI

The W631GU6MB11I TR is a 1 Gigabit DDR3L SDRAM memory chip organized as 8M x 8 banks x 16 bits. It operates at a voltage of 1.35V, making it suitable for low-power applications. The device supports various features such as on-die termination (ODT), self-refresh modes, and multiple operating modes, which enhance its performance and efficiency in different scenarios. The memory chip is packaged in a 96-ball VFBGA format, with a ball pitch of 0.8mm, facilitating compact designs. It is designed for high-speed data transfer, supporting data rates up to 1866 MT/s, which is beneficial for applications requiring fast memory access. The product is suitable for use in consumer electronics, computing, and other applications where reliable and efficient memory is essential.

Suppliers

Company
Product
Description
Supplier Links
Memory - W631GU6MB11ITR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)

SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)

Buy Now Datasheet
Memory - W631GU6MB11I TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)

SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 96VFBGA

IC DRAM 1GBIT PARALLEL 96VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W631GU6MB11I TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W631GU6MB11I TR
Integrated Circuits (ICs) - Memory W631GU6MB11I TR
IC DRAM 1GBIT PARALLEL 96VFBGA

IC DRAM 1GBIT PARALLEL 96VFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number W631GU6MB11ITR-ND W631GU6MB11I TR W631GU6MB11I TR W631GU6MB11I TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 96-VFBGA BGA; 96-VFBGA BGA
Supply Voltage 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V
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