Winbond Electronics Corporation America Memory W631GU6MB-11 TR

Description
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
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Description
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
Request a Quote
Datasheet
Datasheet Summary
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The W631GU6MB-11 TR is a 1 Gigabit DDR3L SDRAM memory chip organized as 8 banks of 8 bits each, designed for high-performance applications. It operates at a voltage of 1.35V, making it suitable for low-power applications. The device supports various features including burst lengths, CAS latency settings, and multiple operating modes, which can be configured through mode registers. The memory chip is housed in a 96-ball VFBGA package, measuring 7.5mm x 13mm with a ball pitch of 0.8mm. It is designed to meet the requirements of modern computing systems, providing reliable performance in data-intensive environments. The product is suitable for applications requiring efficient memory solutions with a focus on power savings and performance.

Datasheet Summary
Powered by GS/AI

The W631GU6MB-11 TR is a 1 Gigabit DDR3L SDRAM memory chip organized as 8 banks of 8 bits each, designed for high-performance applications. It operates at a voltage of 1.35V, making it suitable for low-power applications. The device supports various features including burst lengths, CAS latency settings, and multiple operating modes, which can be configured through mode registers. The memory chip is housed in a 96-ball VFBGA package, measuring 7.5mm x 13mm with a ball pitch of 0.8mm. It is designed to meet the requirements of modern computing systems, providing reliable performance in data-intensive environments. The product is suitable for applications requiring efficient memory solutions with a focus on power savings and performance.

Suppliers

Company
Product
Description
Supplier Links
Memory - W631GU6MB-11TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)

SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W631GU6MB-11 TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W631GU6MB-11 TR
Integrated Circuits (ICs) - Memory W631GU6MB-11 TR
IC DRAM 1GBIT PARALLEL 96VFBGA

IC DRAM 1GBIT PARALLEL 96VFBGA

Supplier's Site
Memory - W631GU6MB-11 TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)

SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 96VFBGA

IC DRAM 1GBIT PARALLEL 96VFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number W631GU6MB-11TR-ND W631GU6MB-11 TR W631GU6MB-11 TR W631GU6MB-11 TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type 96-VFBGA BGA BGA; 96-VFBGA
Supply Voltage 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V
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