The W631GU6MB-11 TR is a 1 Gigabit DDR3L SDRAM memory chip organized as 8 banks of 8 bits each, designed for high-performance applications. It operates at a voltage of 1.35V, making it suitable for low-power applications. The device supports various features including burst lengths, CAS latency settings, and multiple operating modes, which can be configured through mode registers. The memory chip is housed in a 96-ball VFBGA package, measuring 7.5mm x 13mm with a ball pitch of 0.8mm. It is designed to meet the requirements of modern computing systems, providing reliable performance in data-intensive environments. The product is suitable for applications requiring efficient memory solutions with a focus on power savings and performance.
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)
IC DRAM 1GBIT PARALLEL 96VFBGA
IC DRAM 1GBIT PARALLEL 96VFBGA
| DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | W631GU6MB-11TR-ND | W631GU6MB-11 TR | W631GU6MB-11 TR | W631GU6MB-11 TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | |
| Package Type | 96-VFBGA | BGA; 96-VFBGA | BGA | |
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V |
