IC DRAM 1GBIT SSTL 15 96VFBGA Product overview: W631GG6NB-12 from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W631GG6NB-12 can be used for catalog matching and distributor lookup.
SDRAM - DDR3 Memory IC 1Gb (64M x 16) SSTL_15 800MHz 20ns 96-VFBGA (7.5x13)
Win Source Part Number: 1147513-W631GG6NB-12
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 198
Mounting: SMD (SMT)
Technology: SDRAM - DDR3
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)
Temperature Range - Operating: 0°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: SSTL_15
Alternative Parts (Cross-Reference): W631GG6NB12;
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
Mfr: Winbond Electronics
Other Names: 256-W631GG6NB-12
IC SDRAM 1GB DDR3 800MHZ 96WBGA
SDRAM - DDR3 Memory IC 1Gbit SSTL_15 800 MHz 20 ns 96-VFBGA (7.5x13)
IC DRAM 1GBIT SSTL 15 96VFBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-W631GG6NB-12 | 256-W631GG6NB-12-ND | 1147513-W631GG6NB-12 | W631GG6NB-12 | W631GG6NB-12 | W631GG6NB-12 |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.2250 ns | 20 ns | 20 ns | 20 ns | ||
| Operating Temperature | 0 C (32 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | ||
| Number of Words | 8000 k |
