Winbond Electronics Corporation America Memory W29N08GZBIBF

Description
IC FLASH 8GBIT PAR 63VFBGA
Request a Quote Datasheet
Description
IC FLASH 8GBIT PAR 63VFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W29N08GZBIBF-ND - DigiKey
Thief River Falls, MN, United States
IC FLASH 8GBIT PAR 63VFBGA

IC FLASH 8GBIT PAR 63VFBGA

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
W29N08GZBIBF
Integrated Circuits (ICs) - Memory - Memory W29N08GZBIBF
8G-BIT SLC NAND FLASH, 1.8V, 4-B

8G-BIT SLC NAND FLASH, 1.8V, 4-B

Supplier's Site
Memory - W29N08GZBIBF - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND (SLC) Memory IC 8Gbit ONFI 25 ns 63-VFBGA (9x11)

FLASH - NAND (SLC) Memory IC 8Gbit ONFI 25 ns 63-VFBGA (9x11)

Buy Now

Technical Specifications

  DigiKey Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 256-W29N08GZBIBF-ND W29N08GZBIBF W29N08GZBIBF
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 63-VFBGA BGA; 63-VFBGA
Supply Voltage 1.7V ~ 1.95V Surface Mount 1.7V ~ 1.95V
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882578 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 40060108-001 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers