Home

Products & Services

Engineering News

Standards

Webinars

Engineering Forum

Winbond Electronics Corporation America Memory W29GL512SL9B TR

Description

FLASH - NOR Memory IC 512Mbit Parallel 90 ns 64-LFBGA (11x13)

Quarktwin Technology Ltd.
Lingto Electronic Limited

Description

FLASH - NOR Memory IC 512Mbit Parallel 90 ns 64-LFBGA (11x13)

Suppliers

Company

Product

Description

Supplier Links

Memory - W29GL512SL9B TR - Quarktwin Technology Ltd.

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
W29GL512SL9B TR

Memory W29GL512SL9B TR

FLASH - NOR Memory IC 512Mbit Parallel 90 ns 64-LFBGA (11x13)

Buy Now

Memory - W29GL512SL9B TR - Lingto Electronic Limited

Lingto Electronic Limited

Shenzhen, China

Memory
W29GL512SL9B TR

Memory W29GL512SL9B TR

IC FLSH 512MBIT PARALLEL 64LFBGA

Supplier's Site

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	W29GL512SL9B TR	W29GL512SL9B TR
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash
Access Time	90 ns	90 ns
Operating Temperature	-40 to 85 C (-40 to 185 F)

Unlock Full Specs

to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - NM27C020T200 - Shenzhen Shengyu Electronics Technology Limited

Texas Instruments

Integrated Circuits (ICs) - Memory - Memory

Specs

Memory Category EPROM; Non-Volatile

Cycle Time 200 ns

Density 2000 kbits

2 suppliers

Memory - AS8F2M32 - Micross Components, Inc.

Micross Components, Inc.

Specs

Memory Category FLASH

Access Time 90 to 150 ns

Operating Temperature -55 to 125 C (-67 to 257 F)

Flash Memory - 1882567 - RS Components, Ltd.

RS Components, Ltd.

Specs

Memory Category Flash

Access Time 25000 ns

Number of Words 1024 k

$Memory IC and Storage Component - 505-258217\HYS72T256000HR-5-A - ERSAELECTRONICS PTE. LTD.$

Infineon Technologies AG

Memory IC and Storage Component

258217\HYS72T256000HR-5-A