Winbond Electronics Corporation America Memory W29GL512PH9B

Description
FLASH - NOR Memory IC 512Mbit Parallel 90 ns 64-LFBGA (11x13)
  • Memory - W29GL512PH9B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - W29GL512PH9B - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 90 ns 64-LFBGA (11x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W29GL512PH9B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
W29GL512PH9B
Memory W29GL512PH9B
FLASH - NOR Memory IC 512Mbit Parallel 90 ns 64-LFBGA (11x13)

FLASH - NOR Memory IC 512Mbit Parallel 90 ns 64-LFBGA (11x13)

Buy Now
Memory - W29GL512PH9B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
W29GL512PH9B
Memory W29GL512PH9B
IC FLSH 512MBIT PARALLEL 64LFBGA

IC FLSH 512MBIT PARALLEL 64LFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number W29GL512PH9B W29GL512PH9B
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 90 ns 90 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882682
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - JM38510/23102BFA - Quarktwin Technology Ltd.
Texas Instruments
Memory
JM38510/23102BFA
View Details
2 suppliers
Memory - 28497288 A - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
28497288 A
View Details
2 suppliers
Memory - AS8F128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8F128K32
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details