Winbond Electronics Corporation America Memory W29GL128PH9B TR

Description
FLASH - NOR Memory IC 128Mbit Parallel 90 ns 64-LFBGA (11x13)
Description
FLASH - NOR Memory IC 128Mbit Parallel 90 ns 64-LFBGA (11x13)

Suppliers

Company
Product
Description
Supplier Links
Memory - W29GL128PH9B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 90 ns 64-LFBGA (11x13)

FLASH - NOR Memory IC 128Mbit Parallel 90 ns 64-LFBGA (11x13)

Buy Now
IC FLSH 128MBIT PARALLEL 64LFBGA

IC FLSH 128MBIT PARALLEL 64LFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number W29GL128PH9B TR W29GL128PH9B TR
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 90 ns 90 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Logic - FIFOs Memory - 67C4013-15N - Lingto Electronic Limited
Specs
Data Rate 15 MHz
Operating Current 45 mA
View Details
Flash Memory, 4Mbit, 70Ns, 48-Tsop; Flash Memory Type Cypress Infineon Technologies - 42K8340 - Newark, An Avnet Company
Specs
Memory Category Flash
Density 4000 kbits
Package Type TSOP
View Details
Memory - AS8S512K32PECB - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Integrated Circuits (ICs) - Memory - Memory - 93Z451LMQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category PROM; Non-Volatile
Density 8 kbits
Supply Voltage -55degC ~ 125degC (TC)
View Details
2 suppliers