Winbond Electronics Corporation America Memory W25N01GVTBIT TR

Description
1G-BIT SERIAL NAND FLASH, 3V
Datasheet
Description
1G-BIT SERIAL NAND FLASH, 3V
Datasheet

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Description
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1G-BIT SERIAL NAND FLASH, 3V

1G-BIT SERIAL NAND FLASH, 3V

Supplier's Site Datasheet
Memory - W25N01GVTBIT TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND (SLC) Memory IC 1Gbit SPI - Quad I/O 104 MHz 7 ns 24-TFBGA (8x6)

FLASH - NAND (SLC) Memory IC 1Gbit SPI - Quad I/O 104 MHz 7 ns 24-TFBGA (8x6)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W25N01GVTBIT TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W25N01GVTBIT TR
Integrated Circuits (ICs) - Memory W25N01GVTBIT TR
1G-BIT SERIAL NAND FLASH, 3V

1G-BIT SERIAL NAND FLASH, 3V

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number W25N01GVTBIT TR W25N01GVTBIT TR W25N01GVTBIT TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 7 ns 7 ns 7 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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