Winbond Electronics Corporation America Memory W25M121AWEIT TR

Description
1GB SERIAL NAND FLASH 1.8V + 128
Datasheet
Description
1GB SERIAL NAND FLASH 1.8V + 128
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1GB SERIAL NAND FLASH 1.8V + 128

1GB SERIAL NAND FLASH 1.8V + 128

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W25M121AWEIT TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W25M121AWEIT TR
Integrated Circuits (ICs) - Memory W25M121AWEIT TR
1GB SERIAL NAND FLASH 1.8V + 128

1GB SERIAL NAND FLASH 1.8V + 128

Supplier's Site
Memory - W25M121AWEIT TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND, FLASH - NOR Memory IC 128Mbit (FLASH-NOR), 1Gbit (FLASH-NAND) SPI - Quad I/O 104 MHz 8-WSON (8x6)

FLASH - NAND, FLASH - NOR Memory IC 128Mbit (FLASH-NOR), 1Gbit (FLASH-NAND) SPI - Quad I/O 104 MHz 8-WSON (8x6)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number W25M121AWEIT TR W25M121AWEIT TR W25M121AWEIT TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Density 128000 kbits 128000 kbits 128000 kbits
Data Rate 104 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Logic - FIFOs Memory - 67C402-10N - Lingto Electronic Limited
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - 980000259 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory IC and Storage Component - 736-DP8422V-33 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers