Winbond Electronics Corporation America Memory W25M121AVEIT TR

Description
1GB SERIAL NAND FLASH 3V + 128MB
Datasheet
Description
1GB SERIAL NAND FLASH 3V + 128MB
Datasheet

Suppliers

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Product
Description
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1GB SERIAL NAND FLASH 3V + 128MB

1GB SERIAL NAND FLASH 3V + 128MB

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W25M121AVEIT TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W25M121AVEIT TR
Integrated Circuits (ICs) - Memory W25M121AVEIT TR
1GB SERIAL NAND FLASH 3V + 128MB

1GB SERIAL NAND FLASH 3V + 128MB

Supplier's Site
Memory - W25M121AVEIT TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND, FLASH - NOR Memory IC 128Mbit (FLASH-NOR), 1Gbit (FLASH-NAND) SPI - Quad I/O 133 MHz 6 ns 8-WSON (8x6)

FLASH - NAND, FLASH - NOR Memory IC 128Mbit (FLASH-NOR), 1Gbit (FLASH-NAND) SPI - Quad I/O 133 MHz 6 ns 8-WSON (8x6)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number W25M121AVEIT TR W25M121AVEIT TR W25M121AVEIT TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Access Time 6 ns 6 ns 6 ns
Density 128000 kbits 128000 kbits 128000 kbits
Data Rate 133 MHz
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