Win Source Electronics Optoisolators - Transistor, Photovoltaic Output - IS829X 921753-IS829X

The IS829X is an optically coupled isolator featuring a transistor output, designed with Gallium Arsenide infrared emitting diodes and NPN silicon phototransistors. It is housed in a standard 8-pin dual-in-line package (DIP) with two channels per unit. The device offers a high current transfer ratio of at least 50% at an input forward current of 5mA and a collector-emitter voltage of 5V. It is capable of withstanding a high isolation voltage of 5000 V_RMS, making it suitable for applications requiring significant electrical isolation. The operating temperature range for the IS829X is from -55¬8C to +100¬8C, with a storage temperature range of -55¬8C to +125¬8C. The maximum total power dissipation is rated at 170mW, with a derating of 2.27mW/¬8C above 25¬8C. The input diode can handle a forward DC current of up to 50mA and a peak forward current of 1A for short durations. The output transistor has a collector-emitter breakdown voltage (BV_CEO) of 35V and a power dissipation of 150mW, also subject to derating. This product is suitable for applications that require reliable isolation and signal transmission in a compact form factor, making it a viable option for engineers looking for optoisolators in their designs.