Win Source Electronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1382291-ICE20N170

Win Source Part Number: 1382291-ICE20N170 Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 236W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 41 pct. HTSUS: 8541.29.0095 Mfr: Icemos Technology Drive Voltage (Max Rds On, Min Rds On): 10V