The ICE20N170 is an N-channel enhancement mode MOSFET in a TO-220-3 package, rated for 600 V drain-source voltage and 20 A continuous drain current at 25°C. It has a typical on-state resistance of 0.17 Ω at 10 V gate-source voltage and a total gate charge of 59 nC at 480 V and 20 A. The device supports an avalanche energy of 520 mJ and a peak pulsed current of 62 A. Its gate-source voltage is rated at ±20 V, with an operating junction temperature range of -55°C to +150°C. Thermal resistance is 0.53 °C/W junction-to-case and 62 °C/W junction-to-ambient with leaded mounting. The part is built on Superjunction technology and rated for 236 W maximum power dissipation at 25°C case temperature.
Win Source Part Number: 1382291-ICE20N170
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 236W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 41 pct.
HTSUS: 8541.29.0095
Mfr: Icemos Technology
Drive Voltage (Max Rds On, Min Rds On): 10V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1382291-ICE20N170 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Polarity | N-Channel |
