Win Source Electronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1382290-ICE15N60

Description
Win Source Part Number: 1382290-ICE15N60 Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. HTSUS: 8541.29.0095 Mfr: Icemos Technology Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1382290-ICE15N60 Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. HTSUS: 8541.29.0095 Mfr: Icemos Technology Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1382290-ICE15N60 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1382290-ICE15N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1382290-ICE15N60
Win Source Part Number: 1382290-ICE15N60 Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Tube Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. HTSUS: 8541.29.0095 Mfr: Icemos Technology Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1382290-ICE15N60
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Package: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
HTSUS: 8541.29.0095
Mfr: Icemos Technology
Drive Voltage (Max Rds On, Min Rds On): 10V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1382290-ICE15N60
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Polarity N-Channel
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