The ICE15N60 is an N-channel enhancement mode MOSFET designed for high-performance power systems, featuring low on-resistance and ultra-low gate charge. It comes in a TO-220-3 package with a maximum continuous drain current of 15 A at 25°C and a drain-source breakdown voltage of 600 V min. The device has a typical on-resistance of 0.23 Ω at 10 V gate-source voltage and a total gate charge of 59 nC at 480 V drain-source voltage. It supports peak pulsed drain current up to 35 A and single-pulse avalanche energy of 293 mJ. The operating and storage junction temperature range is -55°C to +150°C. The MOSFET is rated for ±20 V gate-source voltage and meets thermal and electrical specifications validated per standard test conditions. It incorporates Superjunction technology protected by multiple granted patents in the USA, China, Korea, Japan, Taiwan, and Europe.
Win Source Part Number: 1382290-ICE15N60
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
HTSUS: 8541.29.0095
Mfr: Icemos Technology
Drive Voltage (Max Rds On, Min Rds On): 10V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1382290-ICE15N60 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Polarity | N-Channel |
