WeEn Semiconductors Single FETs, MOSFETs WSJ2T65R600XQ

The WSJ2T65R600X is a high-voltage N-channel super-junction MOSFET in a TO220F package, designed for high-efficiency power supplies in applications such as chargers, adapters, and lighting. It has a drain-source voltage rating of 650 V, a continuous drain current of 8 A at 25 °C, and a maximum power dissipation of 28 W. The device features a drain-source on-state resistance of 520 to 600 mΩ, a total gate charge of 12 nC, and a single-pulse avalanche energy rating of 34 mJ. It is 100% avalanche tested and operates with a junction temperature range of -55 to 150 °C. The TO220F package has a thermal resistance from junction to case of 3.6 to 4.5 K/W and is compliant with IEC 60134 for absolute maximum ratings.