WeEn Semiconductors Single FETs, MOSFETs WNSCM160120WQ

N-Channel Silicon Carbide MOSFET in a 3-lead TO-247 plastic package with a drain-source voltage rating of 1200 V, a continuous drain current of 24 A at 25 °C, and a on-state resistance of 160 mΩ at 25 °C. Designed for high-frequency, high-efficiency applications such as switch mode power supplies, EV chargers, and solar inverters. Features 0 V turn-off gate voltage, 100% UIS tested, and RoHS compliance.