WeEn Semiconductors Single FETs, MOSFETs WNSC2M1K0170WQ

N-Channel Silicon Carbide MOSFET in a TO247 plastic package with a drain-source voltage rating of 1700 V, a continuous drain current of 10.4 A at 25 °C, and a maximum power dissipation of 122 W. The device features a drain-source on-resistance of 550 to 800 mΩ at 18 V gate voltage, a total gate charge of 12 nC, and is RoHS compliant. It is designed for switching mode power supplies, UPS, energy storage systems, and motor drives, with a junction temperature range of -55 to 175 °C. The TO247 package has three pins: gate, drain, and source, with the mounting base connected to the drain.