WeEn Semiconductors Bipolar Transistors PHE13009,127

Description
Power Transistor NPN 400V 12A TO-220AB
Request a Quote Datasheet
Description
Power Transistor NPN 400V 12A TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistors - 8015662 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
8015662
Bipolar Transistors 8015662
Power Transistor NPN 400V 12A TO-220AB

Power Transistor NPN 400V 12A TO-220AB

Supplier's Site
Bipolar Transistors - 1697275 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1697275
Bipolar Transistors 1697275
Power Transistor NPN 400V 12A TO-220AB

Power Transistor NPN 400V 12A TO-220AB

Supplier's Site
Single Bipolar Transistors - 1740-1199-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1740-1199-ND
Single Bipolar Transistors 1740-1199-ND
Bipolar (BJT) Transistor NPN 400V 12A 80W Through Hole TO-220AB

Bipolar (BJT) Transistor NPN 400V 12A 80W Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - PHE13009,127 - 1035723-PHE13009,127 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PHE13009,127
1035723-PHE13009,127
TRANSISTORS - Transistors (BJT) - Single - PHE13009,127 1035723-PHE13009,127
Manufacturer: WeEn Semiconductors Win Source Part Number: 1035723-PHE13009,127 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 12A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 2V @ 1.6A, 8A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 8 @ 5A, 5V Maximum Power Dissipation: 80W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: WeEn Semiconductors
Win Source Part Number: 1035723-PHE13009,127
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 12A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 2V @ 1.6A, 8A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 8 @ 5A, 5V
Maximum Power Dissipation: 80W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PHE13009,127 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PHE13009,127
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PHE13009,127
TRANS NPN 400V 12A TO220AB

TRANS NPN 400V 12A TO220AB

Supplier's Site

Technical Specifications

  RS Components, Ltd. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 8015662 1740-1199-ND 1035723-PHE13009,127 PHE13009,127
Product Name Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PHE13009,127 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
Package Type TO-220; To-220ab TO-220; TO-220-3 TO-220; SOT3; TO-220AB
Number of units in IC 1
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