WeEn Semiconductors Single Bipolar Transistors PHE13007,127

Bipolar (BJT) Transistor NPN 400V 8A 80W Through Hole TO-220AB

Manufacturer: WeEn Semiconductors
Win Source Part Number: 1035722-PHE13007,127
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 350mV @ 1A, 5A
Collector Cut-off Current(Max): 200μA
Typical Gain (hFE) (Min): 8 @ 2A, 5V
Maximum Power Dissipation: 80W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

TRANS NPN 400V 8A TO220AB Product overview: PHE13007,127 from WeEn Semiconductors Co., Ltd is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHE13007,127 can be used for catalog matching and distributor lookup.