Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92-3
Manufacturer: WeEn Semiconductors
Win Source Part Number: 1087808-PHE13003C,12
Packaging: AMMO PACKAGE
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 1.5V @ 500mA, 1.5A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 5 @ 1A, 2V
Maximum Power Dissipation: 2.1W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 10k pcs
TRANS NPN 400V 1.5A TO92-3
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 1740-1197-3-ND | 1087808-PHE13003C,126 | PHE13003C,126 |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - PHE13003C,126 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN |
