WeEn Semiconductors Single Bipolar Transistors BUJ105AB,118

Description
Bipolar (BJT) Transistor NPN 400V 8A 125W Surface Mount D2PAK
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 400V 8A 125W Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BUJ105AB,118-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BUJ105AB,118-ND
Single Bipolar Transistors BUJ105AB,118-ND
Bipolar (BJT) Transistor NPN 400V 8A 125W Surface Mount D2PAK

Bipolar (BJT) Transistor NPN 400V 8A 125W Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1141568-BUJ105AB,118 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1141568-BUJ105AB,118
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1141568-BUJ105AB,118
Win Source Part Number: 1141568-BUJ105AB,118 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 800 Mounting: SMD (SMT) Power - Max: 125 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 8 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 5V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: WeEn Semiconductors Other Names: 934056850118,BUJ105A B /T3,BUJ105AB /T3-ND,BUJ105AB Base Product Number: BUJ105

Win Source Part Number: 1141568-BUJ105AB,118
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel (TR)
Standard Package: 800
Mounting: SMD (SMT)
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 8 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: WeEn Semiconductors
Other Names: 934056850118,BUJ105AB /T3,BUJ105AB /T3-ND,BUJ105AB
Base Product Number: BUJ105

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUJ105AB,118 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BUJ105AB,118
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BUJ105AB,118
TRANS NPN 400V 8A D2PAK

TRANS NPN 400V 8A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BUJ105AB,118-ND 1141568-BUJ105AB,118 BUJ105AB,118
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB SOT3
IC(max) 8000 milliamps 8000 milliamps
Power Gain 13 dB
Unlock Full Specs
to access all available technical data