Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs VS-FB180SA10P

Description
Win Source Part Number: 1351944-VS-FB180SA10 P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Bulk Standard Package: 160 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Power Dissipation (Max): 480W (Tc) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay General Semiconductor - Diodes Division Base Product Number: FB180 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Request a Quote Datasheet
Description
Win Source Part Number: 1351944-VS-FB180SA10 P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Bulk Standard Package: 160 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Power Dissipation (Max): 480W (Tc) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay General Semiconductor - Diodes Division Base Product Number: FB180 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1351944-VS-FB180SA10P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1351944-VS-FB180SA10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1351944-VS-FB180SA10P
Win Source Part Number: 1351944-VS-FB180SA10 P Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Bulk Standard Package: 160 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Power Dissipation (Max): 480W (Tc) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay General Semiconductor - Diodes Division Base Product Number: FB180 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V

Win Source Part Number: 1351944-VS-FB180SA10P
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Bulk
Standard Package: 160
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Power Dissipation (Max): 480W (Tc)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay General Semiconductor - Diodes Division
Base Product Number: FB180
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - VS-FB180SA10P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VS-FB180SA10P-ND
Single FETs, MOSFETs VS-FB180SA10P-ND
N-Channel 100V 180A (Tc) 480W (Tc) Chassis Mount SOT-227

N-Channel 100V 180A (Tc) 480W (Tc) Chassis Mount SOT-227

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VS-FB180SA10P - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VS-FB180SA10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VS-FB180SA10P
MOSFET N-CH 100V 180A SOT-227

MOSFET N-CH 100V 180A SOT-227

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1351944-VS-FB180SA10P VS-FB180SA10P-ND VS-FB180SA10P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015L - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers
Single FETs, MOSFETs - AUIRFB8405 - ODG (Origin Data Global)
Infineon Technologies AG
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts
View Details
7 suppliers