Manufacturer: Vishay
Win Source Part Number: 399191-VQ3001P-E3
Packaging: Tube/Rail
FET Type: 2 N and 2 P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 850mA, 600mA
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Input Capacitance: 110pF @ 15V
Maximum Rds On at Id,Vgs: 1 Ohm @ 1A, 12V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
MOSFET 2N/2P-CH 30V 0.85A Product overview: VQ3001P-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.85A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-VQ3001P-E3 can be used for catalog matching and distributor lookup.
MOSFET 2N/2P-CH 30V 0.85A
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 399191-VQ3001P-E3 | 289-VQ3001P-E3 | VQ3001P-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ3001P-E3 | 30V 0.85A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | ||
| V(BR)DSS | 30 volts | ||
| PD | 2000 milliwatts |