Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ2001P VQ2001P

Description
Manufacturer: Vishay Win Source Part Number: 1117607-VQ2001P Packaging: Tube/Rail FET Type: 4 P-Channel FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 600mA Gate-Source Threshold Voltage: 4.5V @ 1mA Max Input Capacitance: 150pF @ 15V Maximum Rds On at Id,Vgs: 2 Ohm @ 1A, 12V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1117607-VQ2001P Packaging: Tube/Rail FET Type: 4 P-Channel FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 600mA Gate-Source Threshold Voltage: 4.5V @ 1mA Max Input Capacitance: 150pF @ 15V Maximum Rds On at Id,Vgs: 2 Ohm @ 1A, 12V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ2001P - 1117607-VQ2001P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ2001P
1117607-VQ2001P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ2001P 1117607-VQ2001P
Manufacturer: Vishay Win Source Part Number: 1117607-VQ2001P Packaging: Tube/Rail FET Type: 4 P-Channel FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 600mA Gate-Source Threshold Voltage: 4.5V @ 1mA Max Input Capacitance: 150pF @ 15V Maximum Rds On at Id,Vgs: 2 Ohm @ 1A, 12V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1117607-VQ2001P
Packaging: Tube/Rail
FET Type: 4 P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 600mA
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Input Capacitance: 150pF @ 15V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1A, 12V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VQ2001P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VQ2001P
MOSFET 4P-CH 30V 0.6A 14DIP

MOSFET 4P-CH 30V 0.6A 14DIP

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1117607-VQ2001P VQ2001P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ2001P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 30 volts
PD 2000 milliwatts
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