MOSFET 4N-CH 30V 0.83A 14DIP
Manufacturer: Vishay
Win Source Part Number: 1279774-VQ1001P
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 830mA
Power - Max: 2W
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 14-DIP
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Input Capacitance (Ciss) (Maximum) @ Vds: 110pF @ 15V
Rds On (Maximum) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Alternative Parts (Cross-Reference): VQ1001P-E3;
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
MOSFET 4N-CH 30V 0.83A 14DIP Product overview: VQ1001P from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.83A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.83A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-VQ1001P can be used for catalog matching and distributor lookup.
MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:2W; Product Range:- RoHS Compliant: No
MOSFET 4N-CH 30V 0.83A 14DIP
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | VQ1001P | 1279774-VQ1001P | 289-VQ1001P | 13C1944 | VQ1001P |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ1001P | 30V 0.83A MOSFET Transistor | Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 4 N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 830 milliamps | 3000 milliamps |
