Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ1001P-2 VQ1001P-2

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 799188-VQ1001P-2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) FET Type: 4 N-Channel FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 830mA Power - Max: 2W Part Status: Obsolete(EOL) Family Name: VQ1001P Categories: Discrete Semiconductor Products Manufacturer Package: 14-DIP Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 1mA Input Capacitance (Ciss) (Maximum) @ Vds: 110pF @ 15V Rds On (Maximum) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Introduction Date: August 07, 2001 ECCN: EAR99 Estimated EOL Date: Not Applicable Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 799188-VQ1001P-2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) FET Type: 4 N-Channel FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 830mA Power - Max: 2W Part Status: Obsolete(EOL) Family Name: VQ1001P Categories: Discrete Semiconductor Products Manufacturer Package: 14-DIP Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 1mA Input Capacitance (Ciss) (Maximum) @ Vds: 110pF @ 15V Rds On (Maximum) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Introduction Date: August 07, 2001 ECCN: EAR99 Estimated EOL Date: Not Applicable Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ1001P-2 - 799188-VQ1001P-2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ1001P-2
799188-VQ1001P-2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ1001P-2 799188-VQ1001P-2
Manufacturer: Vishay Siliconix Win Source Part Number: 799188-VQ1001P-2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) FET Type: 4 N-Channel FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 830mA Power - Max: 2W Part Status: Obsolete(EOL) Family Name: VQ1001P Categories: Discrete Semiconductor Products Manufacturer Package: 14-DIP Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 1mA Input Capacitance (Ciss) (Maximum) @ Vds: 110pF @ 15V Rds On (Maximum) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Introduction Date: August 07, 2001 ECCN: EAR99 Estimated EOL Date: Not Applicable Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 799188-VQ1001P-2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 830mA
Power - Max: 2W
Part Status: Obsolete(EOL)
Family Name: VQ1001P
Categories: Discrete Semiconductor Products
Manufacturer Package: 14-DIP
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Input Capacitance (Ciss) (Maximum) @ Vds: 110pF @ 15V
Rds On (Maximum) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Introduction Date: August 07, 2001
ECCN: EAR99
Estimated EOL Date: Not Applicable
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VQ1001P-2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VQ1001P-2
MOSFET 4N-CH 30V 0.83A 14DIP

MOSFET 4N-CH 30V 0.83A 14DIP

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 799188-VQ1001P-2 VQ1001P-2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - VQ1001P-2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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