MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:3.1V; Power Dissipation:6.25W; MSL:- RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 13C0923 |
| Product Name | Mosfet; Channel Type Vishay |
| IDSS | 3000 milliamps |