VEMT2023X01 is a silicon NPN phototransistor with a daylight blocking filter optimized for 830 nm to 950 nm infrared emitters, designed for surface mounting in automotive, photo interrupter, and sensing applications. It features a gullwing package with dimensions of 2.3 x 2.3 x 2.55 mm, a collector-emitter voltage rating of 20 V, and a maximum collector current of 50 mA. The device has a peak spectral sensitivity at 860 nm with a spectral bandwidth of 790 nm to 970 nm, and an angle of half sensitivity of ±35°. It operates from -40 °C to +100 °C, is AEC-Q101 qualified, and meets MSL 2a moisture sensitivity per J-STD-020 with lead-free reflow soldering compatibility.
Photo Transistor Product overview: VEMT2023X01 from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Phototransistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 544-VEMT2023X01 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 544-VEMT2023X01 |
| Product Name | Bipolar Transistor |
| Polarity | NPN |
